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Title: Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals

Abstract

We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

Authors:
 [1];  [2];  [3];  [4];  [5];  [1]
  1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  4. Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  5. Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States)
Publication Date:
OSTI Identifier:
22038820
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 12; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CRYSTALS; FABRICATION; GALLIUM ARSENIDES; GALLIUM IONS; GALLIUM NITRIDES; ION BEAMS; ION IMPLANTATION; IRRADIATION; MATRIX MATERIALS; NANOSTRUCTURES; NITROGEN IONS; NUCLEATION; SEMICONDUCTOR MATERIALS; THERMODYNAMICS; VACANCIES; ZINC SULFIDES

Citation Formats

Wood, A W, Collino, R R, Cardozo, B L, Naab, F, Wang, Y Q, Goldman, R S, and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109. Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals. United States: N. p., 2011. Web. doi:10.1063/1.3665122.
Wood, A W, Collino, R R, Cardozo, B L, Naab, F, Wang, Y Q, Goldman, R S, & Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109. Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals. United States. https://doi.org/10.1063/1.3665122
Wood, A W, Collino, R R, Cardozo, B L, Naab, F, Wang, Y Q, Goldman, R S, and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109. 2011. "Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals". United States. https://doi.org/10.1063/1.3665122.
@article{osti_22038820,
title = {Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals},
author = {Wood, A W and Collino, R R and Cardozo, B L and Naab, F and Wang, Y Q and Goldman, R S and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109},
abstractNote = {We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.},
doi = {10.1063/1.3665122},
url = {https://www.osti.gov/biblio/22038820}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 110,
place = {United States},
year = {Thu Dec 15 00:00:00 EST 2011},
month = {Thu Dec 15 00:00:00 EST 2011}
}