Microstructure, optical property, and electronic band structure of cuprous oxide thin films

Journal Article · Tue Nov 15 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3660782· OSTI ID:22038773

Park, Jun-Woo; Jang, Hyungkeun; Kim, Sung; Choi, Suk-Ho; Lee, Hosun ^[1]; Kang, Joongoo; Wei, Su-Huai ^[2]

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1. Department of Applied Physics, Kyung Hee University, Yong-In 446-701 (Korea, Republic of)
2. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)

Cuprous oxide (Cu{sub 2}O) thin films were grown via radio frequency sputtering deposition at various temperatures. The dielectric functions and luminescence properties of the Cu{sub 2}O thin films were measured using spectroscopic ellipsometry and photoluminescence, respectively. High-energy peaks were observed in the photoluminescence spectra. Several critical points (CPs) were found using second derivative spectra of the dielectric functions and the standard critical point model. The electronic band structure and the dielectric functions were calculated using density functional theory, and the CP energies were estimated to compare with the experimental data. We identified the high-energy photoluminescence peaks to quasi-direct transitions which arose from the granular structures of the Cu{sub 2}O thin films.

• OSTI ID: 22038773
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 10; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
COPPER OXIDES
CRYSTAL GROWTH
DENSITY FUNCTIONAL METHOD
DEPOSITION
DIELECTRIC MATERIALS
ELECTRONIC STRUCTURE
ELLIPSOMETRY
EMISSION SPECTRA
MICROSTRUCTURE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA