Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films
- Department of Materials Science and Engineering, Stanford University, Durand Building, Stanford, California 94305-4034 (United States)
- Novellus Systems Inc., 4000 North First Street, San Jose, California 95134 (United States)
- National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)
The effects of electroplating chemistry and dielectric diffusion barrier composition on copper voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N-doped SiC, O-doped SiC, and dual-layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu/barrier interface. Secondary ion mass spectrometry was used to quantify oxygen content at the Cu/barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.
- OSTI ID:
- 22038679
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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