Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)

Journal Article · Mon Aug 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3624773· OSTI ID:22038677

Chawla, J S; Zhang, X Y; Gall, D ^[1]

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1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

Single-crystal Cu(001) layers, 4-1400 nm thick, were deposited on MgO(001) with and without a 2.5-nm-thick TiN(001) buffer layer. X-ray diffraction and reflection indicate that the TiN(001) surface suppresses Cu-dewetting, yielding a 4 x lower defect density and a 9 x smaller surface roughness than if grown on MgO(001) at 25 deg. C. In situ and low temperature electron transport measurements indicate that ultra-thin (4 nm) Cu(001) remains continuous and exhibits partial specular scattering at the Cu-vacuum boundary with a Fuchs-Sondheimer specularity parameter p = 0.6 {+-} 0.2, suggesting that the use of epitaxial wetting layers is a promising approach to create low-resistivity single-crystal Cu nanoelectronic interconnects.

• OSTI ID: 22038677
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRONS
EPITAXY
LAYERS
MAGNESIUM OXIDES
MONOCRYSTALS
ROUGHNESS
SURFACES
THIN FILMS
TITANIUM NITRIDES
X-RAY DIFFRACTION