Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials
- School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
Diffusion of co-implanted carbon (C) and boron (B) in silicon (Si) and its effect on excess Si self-interstitials (I's) after annealing at 800 and 1000 deg. C were investigated by means of secondary ion mass spectrometry. The experimental results showed that C diffusion was not significant at 800 and 1000 deg. C but later became visible for longer annealing times at 1000 deg. C. B diffusion was reduced by the presence of C when no significant C diffusion was observed, but it was enhanced when C diffusion was observed. These results indicate that all implanted C atoms form immobile CI clusters with excess I in the amount of implanted C and that these CI clusters are stable and trap I to reduce B diffusion. On the contrary, CI clusters are dissolved to emit I for longer annealing times at 1000 deg. C and both B and C diffusion are enhanced. Diffusion simulation based on these models fits the experimental profiles of B and C.
- OSTI ID:
- 22036843
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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