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Title: Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion

Abstract

We investigate the effect of mid-infrared (MIR) pumping on the transport properties of GaAs/(Al,Ga)As terahertz (THz) quantum lasers (TQLs), which rely on quantum coherence effects of intersubband transitions. Aiming at THz lasing at elevated temperatures, we extend the concept of THz gain with and without population inversion of a single, MIR-pumped, electrically driven THz stage proposed by Waldmueller et al.[Phys. Rev. Lett. 99, 117401 (2007)] to an entire TQL. However, experiments using a CO{sub 2} as well as a free-electron laser and numerical simulations show that this resonant MIR pumping causes a negative differential conductivity (NDC) in addition to the NDC caused by sequential tunneling. Lasing of these TQLs is prevented by the formation of electric-field domains below the resonance field strength for gain of each single THz stage.

Authors:
; ; ; ;  [1];  [2];  [2]; ;  [3]
  1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  2. Deutsches Zentrum fuer Luft- und Raumfahrt, Rutherfordstr. 2, 12489 Berlin (Germany)
  3. Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany)
Publication Date:
OSTI Identifier:
22036771
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 10; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; CARBON DIOXIDE; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; FREE ELECTRON LASERS; GAIN; GALLIUM ARSENIDES; GAS LASERS; NUMERICAL ANALYSIS; OPTICAL PUMPING; POPULATION INVERSION; SEMICONDUCTOR MATERIALS; THZ RANGE; TUNNEL EFFECT

Citation Formats

Giehler, M, Wienold, M, Schrottke, L, Hey, R, Grahn, H T, Pavlov, S G, Huebers, H -W, Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin, Winnerl, S, and Schneider, H. Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion. United States: N. p., 2011. Web. doi:10.1063/1.3660676.
Giehler, M, Wienold, M, Schrottke, L, Hey, R, Grahn, H T, Pavlov, S G, Huebers, H -W, Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin, Winnerl, S, & Schneider, H. Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion. United States. https://doi.org/10.1063/1.3660676
Giehler, M, Wienold, M, Schrottke, L, Hey, R, Grahn, H T, Pavlov, S G, Huebers, H -W, Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin, Winnerl, S, and Schneider, H. 2011. "Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion". United States. https://doi.org/10.1063/1.3660676.
@article{osti_22036771,
title = {Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion},
author = {Giehler, M and Wienold, M and Schrottke, L and Hey, R and Grahn, H T and Pavlov, S G and Huebers, H -W and Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin and Winnerl, S and Schneider, H},
abstractNote = {We investigate the effect of mid-infrared (MIR) pumping on the transport properties of GaAs/(Al,Ga)As terahertz (THz) quantum lasers (TQLs), which rely on quantum coherence effects of intersubband transitions. Aiming at THz lasing at elevated temperatures, we extend the concept of THz gain with and without population inversion of a single, MIR-pumped, electrically driven THz stage proposed by Waldmueller et al.[Phys. Rev. Lett. 99, 117401 (2007)] to an entire TQL. However, experiments using a CO{sub 2} as well as a free-electron laser and numerical simulations show that this resonant MIR pumping causes a negative differential conductivity (NDC) in addition to the NDC caused by sequential tunneling. Lasing of these TQLs is prevented by the formation of electric-field domains below the resonance field strength for gain of each single THz stage.},
doi = {10.1063/1.3660676},
url = {https://www.osti.gov/biblio/22036771}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 110,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2011},
month = {Tue Nov 15 00:00:00 EST 2011}
}