Modeling of nanocluster formation by ion beam implantation
- Department of Materials Science, National University of Tainan, Tainan, Taiwan 700 (China)
A theoretical model was developed to investigate the mechanism of the formation of nanoclusters via ion beam implantation. The evolution of nanoclusters, including the nucleation and growth process known as Ostwald ripening, was rebuilt using numerical simulations. The effects of implantation parameters such as the ion energy, ion fluence, and temperature on the morphology of implanted microstructures were also studied through integration with the Monte Carlo Transport of Ions in Matter code calculation for the distribution profiles of implanted ions. With an appropriate ion fluence, a labyrinth-like nanostructure with broad size distributions of nanoclusters formed along the ion implantation range. In a latter stage, a buried layer of implanted impurity developed. With decreasing ion energy, the model predicted the formation of precipitates on the surface. These simulation results were fully consistent with many experimental observations. With increased temperature, the characteristic length and size of nanostructures would increase due to the high mobility. This theoretical model provides an efficient numerical approach for fully understanding the mechanism of the formation of nanoclusters, allowing for the design of ion beam experiments to form specific nanostructures through ion-implantation technology.
- OSTI ID:
- 22036702
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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