InGaAs/GaAs (110) quantum dot formation via step meandering

Diez-Merino, Laura; Tejedor, Paloma

doi:10.1063/1.3608047

Title: InGaAs/GaAs (110) quantum dot formation via step meandering

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Abstract

InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a highmore »« less

Authors:

Diez-Merino, Laura; Tejedor, Paloma ^[1]

Department of Nanostructures and Surfaces, Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049-Madrid (Spain)

Publication Date:: Fri Jul 01 00:00:00 EDT 2011

OSTI Identifier:: 22036645

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 110; Journal Issue: 1; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CHEMISORPTION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MODIFICATIONS; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES

Citation Formats


                    Diez-Merino, Laura, and Tejedor, Paloma. InGaAs/GaAs (110) quantum dot formation via step meandering.  United States: N. p., 2011. 
        Web.  doi:10.1063/1.3608047.

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                    Diez-Merino, Laura, & Tejedor, Paloma. InGaAs/GaAs (110) quantum dot formation via step meandering.  United States.  https://doi.org/10.1063/1.3608047

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                    Diez-Merino, Laura, and Tejedor, Paloma. 2011.  
        "InGaAs/GaAs (110) quantum dot formation via step meandering".  United States.  https://doi.org/10.1063/1.3608047.

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@article{osti_22036645,

  title        = {InGaAs/GaAs (110) quantum dot formation via step meandering},

  author       = {Diez-Merino, Laura and Tejedor, Paloma},

  abstractNote = {InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.},

  doi          = {10.1063/1.3608047},

  url          = {https://www.osti.gov/biblio/22036645},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 1,

  volume       = 110,

  place        = {United States},

  year         = {Fri Jul 01 00:00:00 EDT 2011},

  month        = {Fri Jul 01 00:00:00 EDT 2011}

}

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