Effect of high-pressure H{sub 2}O treatment on elimination of interfacial GeO{sub X} layer between ZrO{sub 2} and Ge stack

Journal Article · Mon Aug 22 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3627187· OSTI ID:22027726

Huang, Chen-Shuo ^[1]; Liu, Po-Tsun ^[2]

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1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 30010, Taiwan (China)
2. Department of Photonics and Display Institute, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 30010, Taiwan (China)

This investigation demonstrates the effect of high-pressure H{sub 2}O treatment on the elimination of the interfacial germanium suboxide (GeO{sub X}) layer between ZrO{sub 2} and Ge. The formation of GeO{sub X} interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H{sub 2}O treatment eliminates the interfacial GeO{sub X} layer. The physical mechanism involves the oxidation of non-oxidized Zr with H{sub 2}O and the reduction of GeO{sub X} by H{sub 2}. Treatment with H{sub 2}O reduces the gate-leakage current of a ZrO{sub 2}/Ge capacitor by a factor of 1000.

• OSTI ID: 22027726
• Journal Information: Applied Physics Letters, Vol. 99, Issue 8; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
DEPOSITION
GERMANIUM
HYDROGEN
INTERFACES
LAYERS
LEAKAGE CURRENT
OXIDATION
PERMITTIVITY
PRESSURE DEPENDENCE
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY
WATER
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM OXIDES