Response of graphene to femtosecond high-intensity laser irradiation
Abstract
We study the response of graphene to high-intensity, 50-femtosecond laser pulse excitation. We establish that graphene has a high ({approx}3 x 10{sup 12} Wcm{sup -2}) single-shot damage threshold. Above this threshold, a single laser pulse cleanly ablates graphene, leaving microscopically defined edges. Below this threshold, we observe laser-induced defect formation leading to degradation of the lattice over multiple exposures. We identify the lattice modification processes through in-situ Raman microscopy. The effective lifetime of chemical vapor deposition grown graphene under femtosecond near-infrared irradiation and its dependence on laser intensity is determined. These results also define the limits of non-linear applications of graphene in femtosecond high-intensity regime.
- Authors:
-
- College of Optical Sciences, University of Arizona, Tucson, Arizona 85701 (United States)
- Department of Physics, University of Arizona, Tucson, Arizona 85721 (United States)
- Publication Date:
- OSTI Identifier:
- 22027697
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 99; Journal Issue: 5; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL LATTICES; EXCITATION; LASER RADIATION; LIFETIME; MICROSCOPY; MODIFICATIONS; NANOSTRUCTURES; NEAR INFRARED RADIATION; NONLINEAR PROBLEMS; PULSED IRRADIATION; PULSES; RAMAN SPECTRA; RAMAN SPECTROSCOPY
Citation Formats
Roberts, Adam, Cormode, Daniel, Reynolds, Collin, Newhouse-Illige, Ty, LeRoy, Brian J, Sandhu, Arvinder S, and College of Optical Sciences, University of Arizona, Tucson, Arizona 85701. Response of graphene to femtosecond high-intensity laser irradiation. United States: N. p., 2011.
Web. doi:10.1063/1.3623760.
Roberts, Adam, Cormode, Daniel, Reynolds, Collin, Newhouse-Illige, Ty, LeRoy, Brian J, Sandhu, Arvinder S, & College of Optical Sciences, University of Arizona, Tucson, Arizona 85701. Response of graphene to femtosecond high-intensity laser irradiation. United States. https://doi.org/10.1063/1.3623760
Roberts, Adam, Cormode, Daniel, Reynolds, Collin, Newhouse-Illige, Ty, LeRoy, Brian J, Sandhu, Arvinder S, and College of Optical Sciences, University of Arizona, Tucson, Arizona 85701. 2011.
"Response of graphene to femtosecond high-intensity laser irradiation". United States. https://doi.org/10.1063/1.3623760.
@article{osti_22027697,
title = {Response of graphene to femtosecond high-intensity laser irradiation},
author = {Roberts, Adam and Cormode, Daniel and Reynolds, Collin and Newhouse-Illige, Ty and LeRoy, Brian J and Sandhu, Arvinder S and College of Optical Sciences, University of Arizona, Tucson, Arizona 85701},
abstractNote = {We study the response of graphene to high-intensity, 50-femtosecond laser pulse excitation. We establish that graphene has a high ({approx}3 x 10{sup 12} Wcm{sup -2}) single-shot damage threshold. Above this threshold, a single laser pulse cleanly ablates graphene, leaving microscopically defined edges. Below this threshold, we observe laser-induced defect formation leading to degradation of the lattice over multiple exposures. We identify the lattice modification processes through in-situ Raman microscopy. The effective lifetime of chemical vapor deposition grown graphene under femtosecond near-infrared irradiation and its dependence on laser intensity is determined. These results also define the limits of non-linear applications of graphene in femtosecond high-intensity regime.},
doi = {10.1063/1.3623760},
url = {https://www.osti.gov/biblio/22027697},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 99,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 2011},
month = {Mon Aug 01 00:00:00 EDT 2011}
}