Eliminating stacking faults in semi-polar GaN by AlN interlayers

Journal Article · Mon Jul 11 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3610467· OSTI ID:22027673

Dadgar, A; Ravash, R; Veit, P; Schmidt, G; Mueller, M; Dempewolf, A; Bertram, F; Wieneke, M; Christen, J; Krost, A ^[1]

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1. Otto-von-Guericke-Universitaet Magdeburg, Institut fuer Experimentelle Physik, Fakultaet fuer Naturwissenschaften, Universitaetsplatz 2, 39106 Magdeburg (Germany)

We report on the elimination of stacking faults by the insertion of low-temperature AlN interlayers in nearly (1016) and (1104) oriented semi-polar GaN grown by metalorganic vapor phase epitaxy on Si(112) and Si(113), respectively. The elimination of these defects is visualized by cathodoluminescence (CL) as well as scanning transmission electron microscopy (STEM) and STEM-CL. A possible annihilation mechanism is discussed which leads to the conclusion that the elimination mechanism is most likely valid for all layers with (1101) surfaces, enabling heteroepitaxial semi- and non-polar GaN free from stacking faults.

• OSTI ID: 22027673
• Journal Information: Applied Physics Letters, Vol. 99, Issue 2; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CATHODOLUMINESCENCE
GALLIUM NITRIDES
LAYERS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
STACKING FAULTS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY