Molecular beam epitaxy and characterization of thin Bi{sub 2}Se{sub 3} films on Al{sub 2}O{sub 3} (110)
The structural and electronic properties of thin Bi{sub 2}Se{sub 3} films grown on Al{sub 2}O{sub 3} (110) by molecular beam epitaxy are investigated. The epitaxial films grow in the Frank-van der Merwe mode and are c-axis oriented. They exhibit the highest crystallinity, the lowest carrier concentration, and optimal stoichiometry at a substrate temperature of 200 deg. C determined by the balance between surface kinetics and desorption of Se. The crystallinity of the films improves with increasing Se/Bi flux ratio. Our results enable studies of thin topological insulator films on inert, non-conducting substrates that allow optical access to both film surfaces.
- OSTI ID:
- 22027668
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 1; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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