Coincident site lattice-matched InGaN on (111) spinel substrates

Journal Article · Mon Apr 09 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3702577· OSTI ID:22025512

Norman, A G; Dippo, P C; Moutinho, H R; Simon, J; Ptak, A J ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Coincident site lattice-matched wurtzite (0001) In{sub 0.31}Ga{sub 0.69}N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl{sub 2}O{sub 4} spinel substrate. The coincident site lattice matching condition involves a 30 deg. rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the ''green gap'' of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.

• OSTI ID: 22025512
• Journal Information: Applied Physics Letters, Vol. 100, Issue 15; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
CRYSTAL GROWTH
CUBIC LATTICES
DISLOCATIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
LIGHT EMITTING DIODES
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SOLIDS
SPINELS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY