Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

Journal Article · Mon Feb 13 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3686922· OSTI ID:22025437

Wong, Man Hoi; Feng, Wu; Hurni, Christophe A; Choi, Soojeong; Speck, James S; Mishra, Umesh K ^[1]

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1. Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 (United States)

InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-ray diffraction {omega}-2{theta} scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAlN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm{sup 2}/Vs and sheet resistances below 244 {Omega}/sq.

• OSTI ID: 22025437
• Journal Information: Applied Physics Letters, Vol. 100, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
AMMONIA
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
FILMS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN
PLASMA
SEMICONDUCTOR MATERIALS
STRAINS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY