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Title: Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition

Abstract

We have examined the formation and evolution of irradiation-induced nanorod (NR) growth through a comparison of focused-ion-beam irradiation of InSb wafers and InSb/GaAs heterostructures. Above a critical ion dose, cone-shaped NRs capped with In islands form on both InSb surfaces. For InSb wafers, the NR base diameter increases with ion energy. In the case of InSb/GaAs heterostructures, as the milled depth approaches the InSb/GaAs interface, the cone-shaped NRs transition to capless NRs with a truncated cone shape. These results suggest a growth mechanism in which both the NR cap and body are supplied by redeposition of atoms sputtered from InSb.

Authors:
;
Publication Date:
OSTI Identifier:
22025426
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 100; Journal Issue: 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ANTIMONIDES; INTERFACES; ION BEAMS; IRRADIATION; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SURFACES

Citation Formats

Wu, J H, and Goldman, R S. Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition. United States: N. p., 2012. Web. doi:10.1063/1.3675641.
Wu, J H, & Goldman, R S. Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition. United States. https://doi.org/10.1063/1.3675641
Wu, J H, and Goldman, R S. 2012. "Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition". United States. https://doi.org/10.1063/1.3675641.
@article{osti_22025426,
title = {Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition},
author = {Wu, J H and Goldman, R S},
abstractNote = {We have examined the formation and evolution of irradiation-induced nanorod (NR) growth through a comparison of focused-ion-beam irradiation of InSb wafers and InSb/GaAs heterostructures. Above a critical ion dose, cone-shaped NRs capped with In islands form on both InSb surfaces. For InSb wafers, the NR base diameter increases with ion energy. In the case of InSb/GaAs heterostructures, as the milled depth approaches the InSb/GaAs interface, the cone-shaped NRs transition to capless NRs with a truncated cone shape. These results suggest a growth mechanism in which both the NR cap and body are supplied by redeposition of atoms sputtered from InSb.},
doi = {10.1063/1.3675641},
url = {https://www.osti.gov/biblio/22025426}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 100,
place = {United States},
year = {Mon Jan 30 00:00:00 EST 2012},
month = {Mon Jan 30 00:00:00 EST 2012}
}