(Si){sub 5-2y}(AlP){sub y} alloys assembled on Si(100) from Al-P-Si{sub 3} building units

Journal Article · Mon Jan 09 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3675444· OSTI ID:22025402

Watkins, T; Chizmeshya, A V. G.; Kouvetakis, J ^[1]; Jiang, L; Xu, C; Smith, D J; Menendez, J ^[2]

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1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States)
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

An original class of IV/III-V hybrid (Si){sub 5-2y}(AlP){sub y}/Si(100) semiconductors have been produced via tailored interactions of molecular P(SiH{sub 3}){sub 3} and atomic Al yielding tetrahedral ''Al-P-Si{sub 3}'' building blocks. Extensive structural, optical, and vibrational characterization corroborates that these units condense to assemble single-phase, monocrystalline alloys containing 60%-90% Si (y = 0.3-1.0) as nearly defect-free layers lattice-matched to Si. Spectroscopic ellipsometry and density functional theory band structure calculations indicate mild compositional bowing of the band gaps, suggesting that the tuning needed for optoelectronic applications should be feasible.

• OSTI ID: 22025402
• Journal Information: Applied Physics Letters, Vol. 100, Issue 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM PHOSPHIDES
BAND THEORY
DENSITY FUNCTIONAL METHOD
ELECTRONIC STRUCTURE
ELLIPSOMETRY
ENERGY GAP
LAYERS
MOLECULAR BEAM EPITAXY
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILANES
SILICON