Relaxation dynamics and residual strain in metamorphic AlSb on GaAs
Abstract
We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.
- Authors:
-
- IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain)
- Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom)
- Laboratory for Solid State Physics, ETH Zurich, Schafmattstr. 16, CH-8093 Zurich (Switzerland)
- Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
- Publication Date:
- OSTI Identifier:
- 22025387
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 100; Journal Issue: 1; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DEFORMATION; DISLOCATIONS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; PLASTICITY; RELAXATION; RESIDUAL STRESSES; RESOLUTION; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; TIME DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY
Citation Formats
Ripalda, J M, Rivera, A, Alen, B, Gonzalez, Y, Gonzalez, L, Briones, F, Sanchez, A M, Taboada, A G, Rotter, T J, and Balakrishnan, G. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs. United States: N. p., 2012.
Web. doi:10.1063/1.3674986.
Ripalda, J M, Rivera, A, Alen, B, Gonzalez, Y, Gonzalez, L, Briones, F, Sanchez, A M, Taboada, A G, Rotter, T J, & Balakrishnan, G. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs. United States. https://doi.org/10.1063/1.3674986
Ripalda, J M, Rivera, A, Alen, B, Gonzalez, Y, Gonzalez, L, Briones, F, Sanchez, A M, Taboada, A G, Rotter, T J, and Balakrishnan, G. 2012.
"Relaxation dynamics and residual strain in metamorphic AlSb on GaAs". United States. https://doi.org/10.1063/1.3674986.
@article{osti_22025387,
title = {Relaxation dynamics and residual strain in metamorphic AlSb on GaAs},
author = {Ripalda, J M and Rivera, A and Alen, B and Gonzalez, Y and Gonzalez, L and Briones, F and Sanchez, A M and Taboada, A G and Rotter, T J and Balakrishnan, G},
abstractNote = {We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.},
doi = {10.1063/1.3674986},
url = {https://www.osti.gov/biblio/22025387},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 100,
place = {United States},
year = {Mon Jan 02 00:00:00 EST 2012},
month = {Mon Jan 02 00:00:00 EST 2012}
}
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