Influence of surfactants on the morphology of SnO{sub 2} nanocrystals prepared via a hydrothermal method
- State Key Laboratory of Chemical Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China)
- Shanghai Institute of Ceramics (SIC), Chinese Academy of Sciences (CAS), 1295 Dingxi Road, Shanghai 200050 (China)
Nanoscaled SnO{sub 2} with different morphologies has been synthesized via a simple hydrothermal process at 180 Degree-Sign C using polyvinylpyrrolidone (PVP), sodium dodecyl sulfonate (SDS), cetyl trimethyl ammonium bromide (CTAB) or tetrapropyl ammonium bromide (TPAB) as surfactant. All the prepared SnO{sub 2} are of a tetragonal crystal structure. Nanocubes, nanorods, nanosheets, nanobelts and nanoparticles were prepared when changing the type and dosage of organic surfactants. It is shown that anionic surfactant (SDS) and cationic surfactant (CTAB or TPAB) at their suitable addition amounts can largely influence the morphologies of SnO{sub 2} nanocrystals. The effect is significantly dependent on the solvent types: water or ethanol. The non-ionic surfactant (PVP) can also change the morphologies like SDS but the impacts are less obvious. The effect of surfactants on the shape and size of SnO{sub 2} nanoparticles was discussed in detail. The particle growth mechanism is described based on the electrostatic interactions and Van der Waals' forces. - Graphical abstract: SnO{sub 2} nanocrystals with controllable morphologies were prepared via a hydrothermal method with surfactants. Highlights: Black-Right-Pointing-Pointer SnO{sub 2} nanocrystals were prepared via a hydrothermal method with surfactants. Black-Right-Pointing-Pointer SnO{sub 2} morphologies changed with the type and the dosage of surfactants. Black-Right-Pointing-Pointer The effect of surfactants on the growth of crystal planes was studied. Black-Right-Pointing-Pointer The controlling mechanisms of surfactants on SnO{sub 2} morphologies were discussed.
- OSTI ID:
- 22012103
- Journal Information:
- Journal of Solid State Chemistry, Vol. . 189; Conference: 6. international conference on materials for advanced technologies,, Singapore (Singapore), 26 Jun - 1 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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