the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics
- Tomsk State University (Russian Federation)
During the formation of the metal-semiconductor contact with a Schottky barrier (as a gold film on the p- or n-type gallium arsenide surface), an electric field E{sub l} built into the electric contact is induced, which propagates around the contact to the distance l (halo) tens of times larger than space-charge region sizes. This field reduces the electrostatic potential of the {phi}{sub Au} contact by a significant value {phi}*. In the general case, the halo size l and the decrease {phi}* in the electrostatic potential are controlled by the charge value and sign in the space-charge region, which depend on the contact diameter D, semiconductor concentration and conductivity type. For Au/n-GaAs Schottky-barrier contacts, a decrease in D results in the increasing role of periphery, which manifests itself in increasing {phi}* and decreasing {phi}{sub Au} and l. For Au/p-GaAs contacts, a decrease in D results in the decreasing effect of periphery, which appears in decreasing {phi}* and increasing {phi}{sub Au} and l. The absence of the space-charge region in metal-insulator-semiconductor contacts results in the fact that the halo size l and {phi}* are independent of their diameters.
- OSTI ID:
- 22004891
- Journal Information:
- Semiconductors, Vol. 45, Issue 1; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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