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Title: Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

Abstract

The effect of variations in the strained Si layer thicknesses, measurement temperature, and optical excitation power on the width of the photoluminescence line produced by self-assembled Ge(Si) nanoislands, which are grown on relaxed SiGe/Si(001) buffer layers and arranged between strained Si layers, is studied. It is shown that the width of the photoluminescence line related to the Ge(Si) islands can be decreased or increased by varying the thickness of strained Si layers lying above and under the islands. A decrease in the width of the photoluminescence line of the Ge(Si) islands to widths comparable with the width of the photoluminescence line of quantum dot (QD) structures based on direct-gap InAs/GaAs semiconductors is attained with consideration of diffusive smearing of the strained Si layer lying above the islands.

Authors:
; ;  [1];  [2]; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Nizhny Novgorod State University, Physico-Technical Research Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22004873
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 45; Journal Issue: 2; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GERMANIUM SILICIDES; INDIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS

Citation Formats

Shaleev, M. V., E-mail: shaleev@ipm.sci-nnov.ru, Novikov, A V, Baydakova, N A, Yablonskiy, A N, Kuznetsov, O A, Lobanov, D N, and Krasilnik, Z F. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers. United States: N. p., 2011. Web. doi:10.1134/S1063782611020199.
Shaleev, M. V., E-mail: shaleev@ipm.sci-nnov.ru, Novikov, A V, Baydakova, N A, Yablonskiy, A N, Kuznetsov, O A, Lobanov, D N, & Krasilnik, Z F. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers. United States. https://doi.org/10.1134/S1063782611020199
Shaleev, M. V., E-mail: shaleev@ipm.sci-nnov.ru, Novikov, A V, Baydakova, N A, Yablonskiy, A N, Kuznetsov, O A, Lobanov, D N, and Krasilnik, Z F. 2011. "Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers". United States. https://doi.org/10.1134/S1063782611020199.
@article{osti_22004873,
title = {Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers},
author = {Shaleev, M. V., E-mail: shaleev@ipm.sci-nnov.ru and Novikov, A V and Baydakova, N A and Yablonskiy, A N and Kuznetsov, O A and Lobanov, D N and Krasilnik, Z F},
abstractNote = {The effect of variations in the strained Si layer thicknesses, measurement temperature, and optical excitation power on the width of the photoluminescence line produced by self-assembled Ge(Si) nanoislands, which are grown on relaxed SiGe/Si(001) buffer layers and arranged between strained Si layers, is studied. It is shown that the width of the photoluminescence line related to the Ge(Si) islands can be decreased or increased by varying the thickness of strained Si layers lying above and under the islands. A decrease in the width of the photoluminescence line of the Ge(Si) islands to widths comparable with the width of the photoluminescence line of quantum dot (QD) structures based on direct-gap InAs/GaAs semiconductors is attained with consideration of diffusive smearing of the strained Si layer lying above the islands.},
doi = {10.1134/S1063782611020199},
url = {https://www.osti.gov/biblio/22004873}, journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 45,
place = {United States},
year = {Tue Feb 15 00:00:00 EST 2011},
month = {Tue Feb 15 00:00:00 EST 2011}
}