Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy
- National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
- Belarusian State University of Informatics and Radio Electronics (Belarus)
- Japan Fine Ceramics Center (Japan)
Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 {Omega} cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550 Degree-Sign C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.
- OSTI ID:
- 22004850
- Journal Information:
- Semiconductors, Vol. 45, Issue 3; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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