Potential distribution in voltage terminating structures with floating p-n junction rings of silicon radiation detectors
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- Yuzhnaya Promzona, Research Institute of Materials Science and Technology (Russian Federation)
A model of the potential distribution in voltage terminating structures (VTSs) with floating p{sup +}-n junction rings in silicon radiation detectors is proposed. The model is based on experimental current-voltage characteristic of interring gaps, measured for detectors based on high-resistivity silicon with resistivities from 1 to 25 k{Omega} cm. The physical basis of the model is the injection principle of current flow through VTS interring gaps, which becomes possible at a certain electric field distribution in space charge regions of p{sup +}-n junctions of the sensitive contact and rings. It is shown that the injection current flow is a universal operation principle of the VTS with floating rings, which leads to rigid stabilization of potentials of individual rings. As a result, it becomes possible to divide the potential irrespective of the semiconductor material resistivity.
- OSTI ID:
- 22004826
- Journal Information:
- Semiconductors, Vol. 45, Issue 4; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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