Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers

Journal Article · Sat Oct 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611100162· OSTI ID:22004710

Podoskin, A A; Vinokurov, D A; Stankevich, A L; Leshko, A Y; Pikhtin, N A; Zabrodskiy, V V; Tarasov, I S ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry-Perot-mode lasing are studied. It is found that reversible turning off of Fabry-Perot-mode lasing is caused by switching to closed-mode lasing. Radiative characteristics of the closed mode are controlled by the mode structure with the close-to-zero loss for radiation output, which covers the entire crystal. The main threshold conditions of closed-mode lasing are a decrease in interband absorption in the passive region and an increase in the modal gain of the closed-mode lasing line. It is shown that a decrease in interband absorption in the passive region can be provided by both spontaneous emission from the injection region and lasing-mode photons. An increase in the modal gain of the closed-mode lasing line is provided by shifting the energy minima of the conduction band and maxima of the valence band of the injection region with respect to the energy bands of the passive region.

• OSTI ID: 22004710
• Journal Information: Semiconductors, Vol. 45, Issue 10; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CRYSTALS
EMISSION
GAIN
INJECTION
LASERS
QUENCHING
SEMICONDUCTOR MATERIALS