Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666412· OSTI ID:21612398

Rangel-Kuoppa, Victor-Tapio; Gang, Chen; Jantsch, Wolfgang ^[1]

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1. Institute of Semiconductor and Solid State Physics, Johannes Kepler Universitat, A-4040 Linz (Austria)

Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

• OSTI ID: 21612398
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666412; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ACTIVATION ENERGY
ATOMIC FORCE MICROSCOPY
BORON
CAPACITANCE
CRYSTAL GROWTH
DEEP LEVEL TRANSIENT SPECTROSCOPY
DENSITY
ELECTRIC POTENTIAL
GERMANIUM
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SILICON
TEMPERATURE DEPENDENCE
TRAPS
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
EPITAXY
METALS
MICROSCOPY
NANOSTRUCTURES
PHYSICAL PROPERTIES
SEMIMETALS
SPECTROSCOPY