Chemical composition and thermal stability of GaAs oxides grown by AFM anodic oxidation for site-controlled growth of InAs quantum dots

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666343· OSTI ID:21612388

Cha, K M; Shibata, K; Horiuchi, I; Kamiko, M; Yamamoto, R ^[1]; Hirakawa, K ^[1]

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1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

We have fabricated GaAs oxides by using atomic force microscope (AFM)-assisted anodic oxidation at various bias voltages, V{sub ox}, and studied their chemical compositions and thermal stabilities. The oxides grown at bias voltages less than 30 V desorbed after standard thermal cleaning in molecular beam epitaxy, while the oxide patterns fabricated at V{sub ox}{>=}40 V survived on the surface. We have further investigated the chemical composition of the oxides by X-ray photoemission spectroscopy. It has been found that the AFM oxides grown at V{sub ox}{approx}10 V predominantly consist of Ga{sub 2}O and GaO, whereas those grown at V{sub ox}{approx}50 V contain a Ga{sub 2}O{sub 3}-component. This result indicates that the better thermal stability of AFM oxides grown at V{sub ox}{>=}40 V can be attributed to the formation of Ga{sub 2}O{sub 3}. We grew a GaAs buffer layer on the oxide nanomasks and obtained nanoholes. After supplying InAs, selective dot nucleation took place in the nanoholes, resulting in successful formation of site-controlled QDs.

• OSTI ID: 21612388
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666343; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CHEMICAL COMPOSITION
CRYSTAL GROWTH
EMISSION SPECTROSCOPY
GALLIUM ARSENIDES
GALLIUM OXIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
NUCLEATION
OXIDATION
PHASE STABILITY
PHOTOEMISSION
QUANTUM DOTS
SURFACES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MICROSCOPY
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SECONDARY EMISSION
SPECTROSCOPY
STABILITY