Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666334· OSTI ID:21612384

Novikov, P L; Smagina, J V; Vlasov, D Yu; Deryabin, A S; Kozhukhov, A S; Dvurechenskii, A V ^[1]

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1. Institute of Semiconductor Physics SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk (Russian Federation)

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barrier 0.9 eV was obtained.

• OSTI ID: 21612384
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666334; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRON BEAMS
ETCHING
EV RANGE
GERMANIUM
MOLECULAR BEAM EPITAXY
MOLECULAR DYNAMICS METHOD
NANOSTRUCTURES
NUCLEATION
SILICON
SUBSTRATES
BEAMS
CALCULATION METHODS
CRYSTAL GROWTH METHODS
ELEMENTS
ENERGY RANGE
EPITAXY
LEPTON BEAMS
METALS
MICROSCOPY
PARTICLE BEAMS
SEMIMETALS
SURFACE FINISHING