Scanning He+ Ion Beam Microscopy and Metrology

Journal Article · Thu Nov 10 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3657869· OSTI ID:21612181

Joy, David C ^[1]

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1. University of Tennessee, Knoxville, TN 37996 and Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

The CD-SEM has been the tool of choice for the imaging and metrology of semiconductor devices for the past three decades but now, with critical dimensions at the nanometer scale, electron beam instruments can no longer deliver adequate performance. A scanning microscope using a He+ ion beam offers superior resolution and depth of field, and provides enhanced imaging contrast. Device metrology performed using ion beam imaging produces data which is comparable to or better than that from a conventional CD-SEM although there are significant differences in the experimental conditions required and in the details of image formation. The charging generated by a He+ beam, and the sample damage that it can cause, require care in operation but are not major problems.

• OSTI ID: 21612181
• Journal Information: AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657869; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ELECTRON BEAMS
ELECTRON EMISSION
ELECTRON MICROSCOPES
HELIUM IONS
IMAGES
ION BEAMS
ION MICROSCOPY
IONIZATION
MEASURING METHODS
OPERATION
PERFORMANCE
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
BEAMS
CHARGED PARTICLES
ELECTRON MICROSCOPY
EMISSION
IONS
LEPTON BEAMS
MICROSCOPES
MICROSCOPY
PARTICLE BEAMS