Hybrid Metrology and 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

Journal Article · Thu Nov 10 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3657905· OSTI ID:21612177

Foucher, J; Faurie, P; Dourthe, L ^[1]; Irmer, B; Penzkofer, C ^[2]

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1. CEA-LETI, D2NT/LLIT, Minatec Campus, 17 rue des Martyrs 38054 Grenoble Cedex 9 (France) (France)
2. Nanotools GmbH, Munich (Germany)

The measurement accuracy is becoming one of the major components that have to be controlled in order to guarantee sufficient production yield. Already at the R and D level, we have to come up with the accurate measurements of sub-40 nm dense trenches and contact holes coming from 193 immersion lithography or E-Beam lithography. Current production CD (Critical Dimension) metrology techniques such as CD-SEM (CD-Scanning Electron Microscope) and OCD (Optical Critical Dimension) are limited in relative accuracy for various reasons (i.e electron proximity effect, outputs parameters correlation, stack influence, electron interaction with materials...). Therefore, time for R and D is increasing, process windows degrade and finally production yield can decrease because you cannot manufactured correctly if you are unable to measure correctly. A new high volume manufacturing (HVM) CD metrology solution has to be found in order to improve the relative accuracy of production environment otherwise current CD Metrology solution will very soon get out of steam.In this paper, we will present a potential Hybrid CD metrology solution that smartly tuned 3D-AFM (3D-Atomic Force Microscope) and CD-SEM data in order to add accuracy both in R and D and production. The final goal for 'chip makers' is to improve yield and save R and D and production costs through real-time feedback loop implement on CD metrology routines. Such solution can be implemented and extended to any kind of CD metrology solution. In a 2{sup nd} part we will discuss and present results regarding a new AFM3D probes breakthrough with the introduction of full carbon tips made will E-Beam Deposition process. The goal is to overcome the current limitations of conventional flared silicon tips which are definitely not suitable for sub-32 nm nodes production.

• OSTI ID: 21612177
• Journal Information: AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657905; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ATOMIC FORCE MICROSCOPY
CARBON
CORRELATIONS
DATA ANALYSIS
ELECTRON BEAMS
ELECTRONS
ENERGY BEAM DEPOSITION
IMAGE PROCESSING
MANUFACTURING
MASKING
MEASURING METHODS
NANOSTRUCTURES
PROXIMITY EFFECT
SCANNING ELECTRON MICROSCOPY
SILICON
BEAMS
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
LEPTON BEAMS
LEPTONS
MICROSCOPY
NONMETALS
PARTICLE BEAMS
PROCESSING
SEMIMETALS
SURFACE COATING