Observation of Work Functions, Metallicity, Band Bending, Interfacial Dipoles by EUPS for Characterizing High-k/Metal Interfaces

Journal Article · Thu Nov 10 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3657881· OSTI ID:21612172

Tomie, Toshihisa; Ishitsuka, Tomoaki; Ootsuka, Teruhisa; Ota, Hiroyuki ^[1]

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1. Innovation Center for Advanced Nanodevices, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568 (Japan)

EUPS (EUV excited photoelectron spectroscopy) is a novel photoelectron spectroscopy technique, in which a sample is excited with 4.86 nm (255 eV), 3-ns pulse EUV light emitted from a laser-produced plasma and the resulting electron spectrum is analyzed with a time-of-flight (TOF) analyzer. EUPS gives information of the topmost atoms because the escape depth of photo-electrons excited by 4.86 nm light is only 0.5 nm. EUPS can evaluate band-bending because the peak density of the excitation light on the sample is extremely high, so that bent electronic bands in semiconductors can be flattened. Secondary electron spectra, from which the vacuum level of the material surface can be determined, are obtained very quickly owing to the use of a TOF analyzer, The metal gate related issues are one of the most challenging topics facing CMOS technology. This paper demonstrates EUPS as a powerful method for characterizing high-k/metal interfaces by showing data from direct observations of interfacial dipoles.

• OSTI ID: 21612172
• Journal Information: AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657881; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BAND THEORY
CAPACITANCE
DIPOLES
ELECTRON EMISSION
ELECTRON SPECTRA
ELECTRONIC STRUCTURE
ELECTRONS
EXCITATION
EXTREME ULTRAVIOLET RADIATION
INTERFACES
METALS
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SURFACES
TIME-OF-FLIGHT MASS SPECTROMETERS
WORK FUNCTIONS
DYNAMIC MASS SPECTROMETERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
FERMIONS
FUNCTIONS
LEPTONS
MASS SPECTROMETERS
MATERIALS
MEASURING INSTRUMENTS
MULTIPOLES
PHYSICAL PROPERTIES
RADIATIONS
SPECTRA
SPECTROMETERS
SPECTROSCOPY
TIME-OF-FLIGHT SPECTROMETERS
ULTRAVIOLET RADIATION