Selective synthesis of boron nitride nanotubes by self-propagation high-temperature synthesis and annealing process

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2011.07.026· OSTI ID:21580265

Jilin, Wang; Laiping, Zhang; Guowei, Zhao ^[1]; Zhanhui, Zhang; Fang, Zhang ^[1]; Weimin, Wang ^[2]

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1. School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073 (China)
2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430073 (China)

Four types of BN nanotubes are selectively synthesized by annealing porous precursor in flowing NH{sub 3} and NH{sub 3}/H{sub 2} atmosphere at temperature ranging from 1000 to 1200 deg. C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave-like, bamboo-like and bubble-chain, are characterized by XRD, FTIR, Raman, SEM, TEM and HRTEM. Three phenomenological growth models are proposed to interpret growth scenario and structure features of the four types of BN nanotubes. Selectivity of nanotubes formation is estimated as approximately 80-95%. The precursor containing B, Mg, Fe and O prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in selective synthesis of the as-synthesized BN nanotubes. Chemical reactions are also discussed. - Graphical Abstract: Four types of BN nanotubes are selectively synthesized by annealing porous precursor prepared by self-propagation high-temperature synthesis. Three phenomenological growth models are proposed to reveal growth scenario and characteristics of the as-synthesized BN nanotubes. Highlights: > Four types of BN nanotubes are selectively synthesized by annealing porous precursor. > Selectivity of BN nanotubes formation is estimated as approximately 80-95 wt%. > Three growth models are proposed to interpret growth of the as-synthesized BN nanotubes. > The precursor prepared by SHS method plays a key role in selective synthesis process.

• OSTI ID: 21580265
• Journal Information: Journal of Solid State Chemistry, Vol. 184, Issue 9; Other Information: DOI: 10.1016/j.jssc.2011.07.026; PII: S0022-4596(11)00405-1; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
AMMONIA
ANNEALING
BORON NITRIDES
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
FOURIER TRANSFORMATION
INFRARED SPECTRA
NANOTUBES
POROUS MATERIALS
PRECURSOR
SCANNING ELECTRON MICROSCOPY
SYNTHESIS
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
BORON COMPOUNDS
CHEMICAL COATING
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
ELECTRON MICROSCOPY
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
INTEGRAL TRANSFORMATIONS
MATERIALS
MICROSCOPY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
PNICTIDES
SCATTERING
SPECTRA
SURFACE COATING
TEMPERATURE RANGE
TRANSFORMATIONS