Layered structure of anodic SiO{sub 2} films doped with phosphorus or boron

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609130077· OSTI ID:21562384

Mileshko, L. P., E-mail: [e-mail] ^[1]

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1. Southern Federal University, Technological Institute (Russian Federation)

It is shown that anodic silicon oxide films deposited by reanodization (repeated anodic oxidation) of p- and n-type silicon in phosphate (1.5 M H{sub 3}PO{sub 4}), borate (1.5 M H{sub 3}BO{sub 3}), and nitrate (0.04 M NH{sub 4}NO{sub 3}) electrolytes based on tetrahydrofurfuryl alcohol have a three- or four-layer structure both before and after high-temperature annealing. It is assumed that this circumstance accounts for the nonuniform distribution of phosphorus and boron across the thickness of anodic SiO{sub 2}.

• OSTI ID: 21562384
• Journal Information: Semiconductors, Vol. 43, Issue 13; Other Information: DOI: 10.1134/S1063782609130077; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALCOHOLS
AMMONIUM NITRATES
ANNEALING
BORATES
BORIC ACID
BORON
DISTRIBUTION
DOPED MATERIALS
ELECTROLYTES
FILMS
LAYERS
OXIDATION
PHOSPHATES
PHOSPHORIC ACID
PHOSPHORUS
SILICA
SILICON
SILICON OXIDES
TEMPERATURE RANGE 0400-1000 K
THICKNESS
AMMONIUM COMPOUNDS
BORON COMPOUNDS
CHALCOGENIDES
CHEMICAL REACTIONS
DIMENSIONS
ELEMENTS
HEAT TREATMENTS
HYDROGEN COMPOUNDS
HYDROXY COMPOUNDS
INORGANIC ACIDS
INORGANIC COMPOUNDS
MATERIALS
MINERALS
NITRATES
NITROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOSPHORUS COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
TEMPERATURE RANGE