Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Journal Article · Fri Jan 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610010161· OSTI ID:21562362

Lundin, W V; Sakharov, A V; Zavarin, E E; Usov, S O; Nikolaev, A E; Cherkashin, N A; Ber, B Ya; Kazantsev, D Yu ^[1]; Mizerov, M N ^[2]; Park, Hee Seok ^[3]; Hytch, M; Hue, F ^[4]

---

1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation)
3. Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of)
4. National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

• OSTI ID: 21562362
• Journal Information: Semiconductors, Vol. 44, Issue 1; Other Information: DOI: 10.1134/S1063782610010161; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
LIGHT EMITTING DIODES
OPTICAL PROPERTIES
QUANTUM EFFICIENCY
QUANTUM WELLS
SUPERLATTICES
EFFICIENCY
GALLIUM COMPOUNDS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES