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Title: Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm)

Journal Article · · Semiconductors
;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The effect of doping with Eu, Er, and Sm rare-earth ions on the shape of the luminescence spectrum for heterostructures with GaN/In{sub x}Ga{sub 1-x}N (0.1 < x < 0.4) quantum wells and from p-GaN<Mg>/n-GaN and p-AlGaN/n-GaN junctions is investigated. The results of measurements of the electroluminescence of these structures correlate with the previous data on photoluminescence and Moessbauer spectroscopy. It is shown that it is the GaN 'yellow' (5000-6000 A) band that plays the important role in the excitation of intracenter states in the structures with several GaN/InGaN quantum wells doped with Eu and Sm. In this case, Eu is most likely the sensitizer for Sm. Additional introduction of 3d metal (Fe{sup 57}) in p-GaN<Mg>/n-GaN:Eu results in the realization of intracenter transitions in Eu{sup 3+}: {sup 5}D{sub 0} {sup {yields} 7}F{sub 1} (6006 A), {sup 5}D{sub 0} {sup {yields} 7}F{sub 2} (6195 A), {sup 5}D{sub 0} {sup {yields} 7}F{sub 3} (6627 A), and {sup 5}D{sub 1} {sup {yields} 7}F{sub 4} (6327 A) due to the occurrence of new, efficient channels of excitation transfer to intracenter states and in the effect of Fe on the local environment of rare-earth ions including due to the f-d hybridization enhancement.

OSTI ID:
21562335
Journal Information:
Semiconductors, Vol. 44, Issue 3; Other Information: DOI: 10.1134/S1063782610030097; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English