Interaction of copper impurity with radiation defects in silicon doped with boron

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610080038· OSTI ID:21562249

Weber, J ^[1]

---

1. Technische Universitaet Dresden (Germany)

The spectrum of deep levels formed in boron-doped Czochralski-grown silicon single crystals as a result of interaction of radiation defects with copper impurity is studied. It is shown that, irrespective of the order of introduction of defects (both in the case of low-temperature copper diffusion into crystals preliminarily irradiated with electrons and in the case of irradiation of the samples contaminated with copper), the same set of deep levels appears. In addition to conventional radiation defects, three types of levels have been detected in the band gap of copper-containing crystals. These levels include the level E{sub v} + 0.49 eV (already mentioned in available publications), the level E{sub v} + 0.51 eV (previously not related to copper), and a level close to the donor level of a vacancy. Based on the analysis of concentration profiles, the interstitial carbonoxygen pair is excluded from possible precursors of the copper-containing center with level E{sub v} + 0.49 eV.

• OSTI ID: 21562249
• Journal Information: Semiconductors, Vol. 44, Issue 8; Other Information: DOI: 10.1134/S1063782610080038; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
COPPER
DEFECTS
DIFFUSION
DOPED MATERIALS
ELECTRONS
IMPURITIES
INTERACTIONS
INTERSTITIALS
IRRADIATION
MONOCRYSTALS
SILICON
SPECTRA
TEMPERATURE RANGE 0065-0273 K
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
LEPTONS
MATERIALS
METALS
POINT DEFECTS
SEMIMETALS
TEMPERATURE RANGE
TRANSITION ELEMENTS