Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610080142· OSTI ID:21562240

Kateev, I Yu; Elesin, V F ^[1]

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1. MEPhI National Research Nuclear University (Russian Federation)

Using the numerical solution to the Schroedinger equation, current-voltage characteristics of the resonant-tunneling diode with spacer layers were obtained. The dependences of the peak current of the resonant-tunneling diode on the emitter spacer width were plotted. It was shown that the peak current depends periodically on the emitter spacer width. The constructed electron density diagrams showed that the increase in the peak current is associated with the resonant level in the emitter spacer region.

• OSTI ID: 21562240
• Journal Information: Semiconductors, Vol. 44, Issue 8; Other Information: DOI: 10.1134/S1063782610080142; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
CURRENTS
ELECTRIC POTENTIAL
ELECTRON DENSITY
LAYERS
NUMERICAL SOLUTION
PEAKS
PERIODICITY
SCHROEDINGER EQUATION
SPACERS
TUNNEL DIODES
DIFFERENTIAL EQUATIONS
EQUATIONS
MATHEMATICAL SOLUTIONS
PARTIAL DIFFERENTIAL EQUATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
VARIATIONS
WAVE EQUATIONS