Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystal

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610090162· OSTI ID:21562221

Romanov, R I; Zuev, V V; Demin, M V; Grigoriev, V V ^[1]

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1. MEPhI National Research Nuclear University (Russian Federation)

Diode structures with ideality factors of 1.28-2.14 and potential barriers from 0.58 to 0.62 eV on the semiconductor side were formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, and Zr metal films on n-6H-SiC crystal without epitaxial layer preparation. A high density of surface acceptor and donor states was formed at the metal-semiconductor interface during deposition of the laser-induced atomic flux, which violated the correlation between the potential barrier height and metal work function. The barrier heights determined from characteristic currents and capacitance measurements were in quite good agreement. For the used low-resistance semiconductor and contact elements, the sizes of majority carrier (electron) depletion regions were determined as 26-60 nm.

• OSTI ID: 21562221
• Journal Information: Semiconductors, Vol. 44, Issue 9; Other Information: DOI: 10.1134/S1063782610090162; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CARRIERS
CRYSTALS
DENSITY
ELECTRONS
ENERGY BEAM DEPOSITION
EPITAXY
INTERFACES
LASER RADIATION
LASERS
LAYERS
METALS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SURFACES
THIN FILMS
WORK FUNCTIONS
CARBIDES
CARBON COMPOUNDS
CRYSTAL GROWTH METHODS
DEPOSITION
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
FILMS
FUNCTIONS
IRRADIATION
LEPTONS
MATERIALS
PHYSICAL PROPERTIES
RADIATIONS
SILICON COMPOUNDS
SURFACE COATING