Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110187· OSTI ID:21562178

Andreev, B A; Krasilnikova, L V; Kryzhkov, D I ^[1]; Kuznetsov, V P ^[2]; Krasilnik, Z F ^[1]

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1. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
2. Nizhni Novgorod State University, Physicotechnical Research Institute (Russian Federation)

The excitation spectra and kinetics of erbium photoluminescence and silicon interband photoluminescence in Si:Er/Si structures under conditions of high-intensity pulse optical excitation are studied. It is shown that, in the interband photoluminescence spectra of the Si:Er/Si structures, both the luminescence of free excitons and the emission associated with the electron-hole plasma can be observed, depending on the excitation power and wavelength. It is found that the formation of a peak in the erbium photoluminescence excitation spectra at high pumping powers correlates with the Mott transition from the exciton gas to the electron-hole plasma. It is demonstrated that, in the Si:Er/Si structures, the characteristic rise times of erbium photoluminescence substantially depend on the concentration of charge carriers.

• OSTI ID: 21562178
• Journal Information: Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110187; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
EPITAXY
ERBIUM
EXCITATION
EXCITONS
KINETICS
PEAKS
PHOTOLUMINESCENCE
PULSES
SILICON
SOLID-STATE PLASMA
SPECTRA
WAVELENGTHS
CRYSTAL GROWTH METHODS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
LUMINESCENCE
METALS
PHOTON EMISSION
PLASMA
QUASI PARTICLES
RARE EARTHS
SEMIMETALS