Magnetic properties of ion implanted Ge{sub 1-x}Mn{sub x} thin films solidified through pulsed laser melting

Journal Article · Sun May 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3590137· OSTI ID:21560231

Commisso Dolph, Melissa ^[1]; Kim, Taeseok; Recht, Daniel; Aziz, Michael J ^[2]; Wenjing, Yin; Wenbin, Fan; Jiani, Yu; Jiwei, Lu ^[3]; Wolf, Stuart A ^[1]

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1. Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States)
2. Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
3. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

Ge{sub 1-x}Mn{sub x} thin films with an average Mn concentration of 0.64 at. % were fabricated through Mn ion implantation into crystalline germanium-on-insulator wafers. Implantation damage was removed and crystallinity restored by pulsed laser melting from a single 30-ns 308-nm XeCl{sup +} excimer laser pulse. Resolidified films demonstrated higher Curie temperatures but smaller saturation magnetizations than those of both as-implanted films and implanted films subjected to rapid thermal annealing. These findings are attributed to the redistribution of Mn during solidification.

• OSTI ID: 21560231
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 9; Other Information: DOI: 10.1063/1.3590137; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CURIE POINT
DAMAGE
EXCIMER LASERS
GERMANIUM
GERMANIUM COMPOUNDS
GERMANIUM IONS
ION IMPLANTATION
LASER MATERIALS
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE COMPOUNDS
MANGANESE IONS
MELTING
PULSES
SEMICONDUCTOR MATERIALS
SOLIDIFICATION
THIN FILMS
CHARGED PARTICLES
ELEMENTS
FILMS
GAS LASERS
HEAT TREATMENTS
IONS
LASERS
MATERIALS
METALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE