Carbon diffusion in alumina from carbon and Ti{sub 2}AlC thin films

Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3573490· OSTI ID:21560169

Guenette, Mathew C; Tucker, Mark D; Bilek, Marcela M. M.; McKenzie, David R ^[1]; Ionescu, Mihail ^[2]

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1. School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)
2. Australian Nuclear Science and Technology Organisation, PMB 1, Menai, New South Wales 2234 (Australia)

Carbon diffusion is observed in single crystal {alpha}-Al{sub 2}O{sub 3} substrates from carbon and Ti{sub 2}AlC thin films synthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substrate temperatures of 570 deg. C and above. The diffusion coefficient of carbon in {alpha}-Al{sub 2}O{sub 3} is estimated to be of the order 3x10{sup -13} cm{sup 2}/s for deposition temperatures in the 570-770{sup o}C range by examining elastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriate diffusion barrier may be useful when depositing carbon containing thin films on {alpha}-Al{sub 2}O{sub 3} substrates at high temperatures.

• OSTI ID: 21560169
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 8; Other Information: DOI: 10.1063/1.3573490; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CARBON
CARBON COMPOUNDS
CHEMICAL ANALYSIS
DIFFUSION
DIFFUSION BARRIERS
MONOCRYSTALS
PLASMA ARC SPRAYING
RECOILS
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANIUM COMPOUNDS
CHALCOGENIDES
CRYSTALS
DEPOSITION
ELEMENTS
FILMS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
SPRAY COATING
SURFACE COATING
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS