Ripple rotation in epitaxial growth of MnAs(1100)

Journal Article · Tue Mar 15 00:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.83.121305· OSTI ID:21541758

Vidal, F; Etgens, V H; Salles, B Rache; Eddrief, M ^[1]; Fernandes, V ^[1]

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1. Institut des NanoSciences de Paris, UPMC, CNRS UMR 7588, 4 place Jussieu, F-75252 Paris Cedex 05 (France)

Rippled states formation driven by kinetic instability is evidenced in the case of MnAs(1100) hetero- and homoepitaxial growth in a narrow multistable range of growth parameters. The evolution of the surface morphology in this range, comprising slope selection and ripple rotation, maps the kinetic phase diagram recently predicted [A. Levandovsky and L. Golubovic, Phys. Rev. E 76, 041605 (2007)] for growth on rectangular symmetry surfaces, including Ehrlich-Schwoebel instability and effects related to vertical asymmetry.

• OSTI ID: 21541758
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 83, Issue 12; Other Information: DOI: 10.1103/PhysRevB.83.121305; (c) 2011 American Institute of Physics; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
EPITAXY
EVOLUTION
INSTABILITY
MANGANESE ARSENIDES
PHASE DIAGRAMS
ROTATION
SURFACES
SYMMETRY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
DIAGRAMS
INFORMATION
MANGANESE COMPOUNDS
MOTION
PNICTIDES
TRANSITION ELEMENT COMPOUNDS