Usage of antimony segregation for selective doping of Si in molecular beam epitaxy
- Institute for Physics of Microstructures Russian Academy of Sciences, 603950, Nizhny Novgorod, GSP-105 (Russian Federation)
- Max-Planck-Institut fur Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany)
An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy (MBE) is proposed and verified experimentally. This approach is based on controllable utilization of the effect of Sb segregation. In particular, the sharp dependence of Sb segregation on growth temperature in the range of 300-550 deg. C is exploited. The growth temperature variations between the kinetically limited and maximum segregation regimes are suggested to be utilized in order to obtain selectively doped structures with abrupt doping profiles. It is demonstrated that the proposed technique allows formation of selectively doped Si:Sb layers, including delta ({delta}-)doped layers in which Sb concentrations can be varied from 5 x 10{sup 15} to 10{sup 20} cm{sup -3}. The obtained doped structures are shown to have a high crystalline quality and the short-term growth interruptions, which are needed to change the substrate temperature, do not lead to any significant accumulation of background impurities in grown samples. Realization of the proposed approach requires neither too low (<300 deg. C), nor too high (>600 deg. C) growth temperatures or any special equipment for the MBE machines.
- OSTI ID:
- 21538406
- Journal Information:
- Journal of Applied Physics, Vol. 109, Issue 11; Other Information: DOI: 10.1063/1.3594690; (c) 2011 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANTIMONY ADDITIONS
DOPED MATERIALS
FALLOUT
IMPURITIES
LAYERS
MOLECULAR BEAM EPITAXY
OCCUPATIONAL EXPOSURE
SEGREGATION
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
ALLOYS
ANTIMONY ALLOYS
CRYSTAL GROWTH METHODS
ELEMENTS
EPITAXY
MATERIALS
SEMIMETALS
TEMPERATURE RANGE