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Title: O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide

Abstract

The present paper reports the energy loss near-edge structure (ELNES) study of monoclinic HfO{sub 2} (m-HfO{sub 2}) and tantalum doped m-HfO{sub 2} (Ta{sub 0.1}Hf{sub 0.9}O{sub 2}) thin films prepared by radio frequency magnetron co-sputtering method. A change in the O K-ELNES spectra was observed as the amount of dopant increases. In order to precise the common features and the differences as a function of Ta defect nature (substitutional or interstitial) in HfO{sub 2}, the O K-ELNES were commented with respect to density functional theory calculations implemented in Vienna ab initio simulation package code. The calculated Ta doped HfO{sub 2} band structure showed that substitutional tantalum is the dominant defect and the spectral differences between doped and non-doped HfO{sub 2} are mainly originated from the change in the local cation distribution around the oxygen atoms.

Authors:
 [1];  [2]; ;  [3];  [4]
  1. Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Youngin-Si, Gyeonggi-Do, 446-712, Korea and School of Advanced Materials Science and Engineering SungKyunKwan University, Suwon 440-746 (Korea, Republic of)
  2. Korea Basic Science Institute (KBSI), Seoul 136-713 (Korea, Republic of)
  3. Laboratoire de Physique des Solides, University Paris-Sud, UMR-CNRS 8502 91405, Orsay (France)
  4. Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Youngin-Si, Gyeonggi-Do 446-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21538147
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 5; Other Information: DOI: 10.1063/1.3553410; (c) 2011 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CRYSTAL DEFECTS; DENSITY FUNCTIONAL METHOD; DEPOSITION; DISTRIBUTION; DOPED MATERIALS; ENERGY LOSSES; ENERGY-LOSS SPECTROSCOPY; HAFNIUM OXIDES; IMPURITIES; INTERSTITIALS; MAGNETRONS; MONOCLINIC LATTICES; OXYGEN; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SIMULATION; SPECTRA; TANTALUM ADDITIONS; THIN FILMS; ALLOYS; CALCULATION METHODS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; HAFNIUM COMPOUNDS; LOSSES; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RADIATIONS; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; TANTALUM ALLOYS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS

Citation Formats

Yang, Mino, Baik, Hionsuck, Ivanovskaya, Viktoria, Colliex, Christian, and Benayad, Anass. O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide. United States: N. p., 2011. Web. doi:10.1063/1.3553410.
Yang, Mino, Baik, Hionsuck, Ivanovskaya, Viktoria, Colliex, Christian, & Benayad, Anass. O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide. United States. https://doi.org/10.1063/1.3553410
Yang, Mino, Baik, Hionsuck, Ivanovskaya, Viktoria, Colliex, Christian, and Benayad, Anass. 2011. "O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide". United States. https://doi.org/10.1063/1.3553410.
@article{osti_21538147,
title = {O K-energy loss near-edge structure change induced by tantalum impurity in monoclinic hafnium oxide},
author = {Yang, Mino and Baik, Hionsuck and Ivanovskaya, Viktoria and Colliex, Christian and Benayad, Anass},
abstractNote = {The present paper reports the energy loss near-edge structure (ELNES) study of monoclinic HfO{sub 2} (m-HfO{sub 2}) and tantalum doped m-HfO{sub 2} (Ta{sub 0.1}Hf{sub 0.9}O{sub 2}) thin films prepared by radio frequency magnetron co-sputtering method. A change in the O K-ELNES spectra was observed as the amount of dopant increases. In order to precise the common features and the differences as a function of Ta defect nature (substitutional or interstitial) in HfO{sub 2}, the O K-ELNES were commented with respect to density functional theory calculations implemented in Vienna ab initio simulation package code. The calculated Ta doped HfO{sub 2} band structure showed that substitutional tantalum is the dominant defect and the spectral differences between doped and non-doped HfO{sub 2} are mainly originated from the change in the local cation distribution around the oxygen atoms.},
doi = {10.1063/1.3553410},
url = {https://www.osti.gov/biblio/21538147}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 109,
place = {United States},
year = {Tue Mar 01 00:00:00 EST 2011},
month = {Tue Mar 01 00:00:00 EST 2011}
}