skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1]; ; ;  [1]; ; ; ;  [2]; ; ; ;  [3];  [4]; ; ;  [5];  [1]
  1. Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic)
  2. Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic)
  3. Institute of Physics ASCR, v.v.i., Na Slovance 2, 182 21 Praha 8 (Czech Republic)
  4. Faculty of Science, Charles University in Prague, Hlavova 2030, 128 40 Prague 2 (Czech Republic)
  5. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

OSTI ID:
21538063
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 83, Issue 3; Other Information: DOI: 10.1103/PhysRevB.83.035321; (c) 2011 American Institute of Physics; ISSN 1098-0121
Country of Publication:
United States
Language:
English