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Title: Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films

Abstract

The effect of 2.245 GeV Au-ion irradiation/postannealing processes on the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films was investigated. Au-ion irradiation with a fluence of around 8.4x10{sup 13} ions/cm{sup 2} is required to induce a large improvement in the EFE properties of the UNCD films. Postannealing the Au-ion irradiated films at 1000 deg. C for 1 h slightly degraded the EFE properties of the films but the resulting EFE behavior was still markedly superior to that of pristine UNCD films. Transmission electron microscopy examinations revealed that the EFE properties of the UNCD films are primarily improved by Au-ion irradiation/postannealing processes because of the formation of nanographites along the trajectory of the irradiating ions, which results in an interconnected path for electron transport. In contrast, the induction of grain growth process due to Au-ion irradiation in UNCD films is presumed to insignificantly degrade the EFE properties for the films as the aggregates are scarcely distributed and do not block the electron conducting path.

Authors:
; ; ;  [1];  [2];  [2]
  1. Department of Physics, Tamkang University, Tamsui, Taiwan 251 (China)
  2. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
Publication Date:
OSTI Identifier:
21537991
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 108; Journal Issue: 12; Other Information: DOI: 10.1063/1.3524541; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; ELECTRONS; FIELD EMISSION; GEV RANGE 01-10; GOLD; GOLD IONS; GRAIN GROWTH; ION BEAMS; IRRADIATION; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; THIN FILMS; TRAJECTORIES; TRANSMISSION ELECTRON MICROSCOPY; BEAMS; CARBON; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; FERMIONS; FILMS; GEV RANGE; HEAT TREATMENTS; IONS; LEPTONS; MATERIALS; METALS; MICROSCOPY; MINERALS; NONMETALS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS

Citation Formats

Chen, Huang-Chin, Teng, Kuang-Yau, Tang, Chen-Yau, Lin, I-Nan, Sundaravel, Balakrishnan, Amirthapandian, Sankarakumar, and Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart. Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films. United States: N. p., 2010. Web. doi:10.1063/1.3524541.
Chen, Huang-Chin, Teng, Kuang-Yau, Tang, Chen-Yau, Lin, I-Nan, Sundaravel, Balakrishnan, Amirthapandian, Sankarakumar, & Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart. Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films. United States. https://doi.org/10.1063/1.3524541
Chen, Huang-Chin, Teng, Kuang-Yau, Tang, Chen-Yau, Lin, I-Nan, Sundaravel, Balakrishnan, Amirthapandian, Sankarakumar, and Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart. 2010. "Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films". United States. https://doi.org/10.1063/1.3524541.
@article{osti_21537991,
title = {Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films},
author = {Chen, Huang-Chin and Teng, Kuang-Yau and Tang, Chen-Yau and Lin, I-Nan and Sundaravel, Balakrishnan and Amirthapandian, Sankarakumar and Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart},
abstractNote = {The effect of 2.245 GeV Au-ion irradiation/postannealing processes on the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films was investigated. Au-ion irradiation with a fluence of around 8.4x10{sup 13} ions/cm{sup 2} is required to induce a large improvement in the EFE properties of the UNCD films. Postannealing the Au-ion irradiated films at 1000 deg. C for 1 h slightly degraded the EFE properties of the films but the resulting EFE behavior was still markedly superior to that of pristine UNCD films. Transmission electron microscopy examinations revealed that the EFE properties of the UNCD films are primarily improved by Au-ion irradiation/postannealing processes because of the formation of nanographites along the trajectory of the irradiating ions, which results in an interconnected path for electron transport. In contrast, the induction of grain growth process due to Au-ion irradiation in UNCD films is presumed to insignificantly degrade the EFE properties for the films as the aggregates are scarcely distributed and do not block the electron conducting path.},
doi = {10.1063/1.3524541},
url = {https://www.osti.gov/biblio/21537991}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 108,
place = {United States},
year = {Wed Dec 15 00:00:00 EST 2010},
month = {Wed Dec 15 00:00:00 EST 2010}
}