UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

Journal Article · Mon Apr 04 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3575554· OSTI ID:21518377

Lausecker, E; Brehm, M; Grydlik, M; Hackl, F; Fromherz, T; Schaeffler, F; Bauer, G ^[1]; Bergmair, I; Muehlberger, M ^[2]

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1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz (Austria)
2. Functional Surfaces and Nanostructures, Profactor GmbH, 4407 Steyr-Gleink (Austria)

We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam epitaxy on arrays of 3x3 mm{sup 2} and characterized by atomic force microscopy (AFM) and photoluminescence (PL) measurements. AFM-based statistics reveals an extremely uniform size distribution of the islands in the patterned areas. These results are confirmed by very narrow and uniform PL peaks recorded at various positions across the patterned arrays.

• OSTI ID: 21518377
• Journal Information: Applied Physics Letters, Vol. 98, Issue 14; Other Information: DOI: 10.1063/1.3575554; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
BEAMS
DISTRIBUTION
GERMANIUM ALLOYS
GERMANIUM SILICIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SPECTROSCOPY
STATISTICS
SUBSTRATES
ULTRAVIOLET RADIATION
ALLOYS
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
EPITAXY
GERMANIUM COMPOUNDS
LUMINESCENCE
MATERIALS
MATHEMATICS
MICROSCOPY
PHOTON EMISSION
RADIATIONS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS