Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Journal Article · Mon Mar 07 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3559618· OSTI ID:21518317

Gotschke, T; Schumann, T; Limbach, F; Calarco, R ^[1]; Stoica, T ^[1]

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1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-Fundamentals of Future Information Technology (FIT), 52425 Juelich (Germany)

Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d{sub h}) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d{sub h} and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

• OSTI ID: 21518317
• Journal Information: Applied Physics Letters, Vol. 98, Issue 10; Other Information: DOI: 10.1063/1.3559618; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM NITRIDES
DIFFUSION
DIFFUSION LENGTH
ELECTRON BEAMS
GALLIUM NITRIDES
GROWTH
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
ALUMINIUM COMPOUNDS
BEAMS
CRYSTAL GROWTH METHODS
DIMENSIONS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LENGTH
LEPTON BEAMS
MATERIALS
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PARTICLE BEAMS
PNICTIDES
SEMIMETALS