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Title: Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3562307· OSTI ID:21518315
; ;  [1];  [2];  [3];  [4]
  1. Department of Electrical and Computer Engineering, Plasma Processing and Technology Laboratory, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Novellus Systems, Tualatin, Oregon 97062 (United States)
  3. Novellus Systems, Albany, New York 12203 (United States)
  4. Stanford University, Stanford, California 94305 (United States)

Defect concentrations in low-k organosilicate glass films deposited on high-resistivity silicon were measured with electron-spin resonance. Bulk dangling bonds were detected. Both plasma exposure and ultraviolet exposure were used. During argon electron cyclotron resonance plasma exposure, ion and photon bombardment increased the measured defect concentrations. Ultraviolet lamp exposure was also shown to increase the defect concentrations. Dielectric samples with various dielectric constants were examined showing that as the value of the dielectric constant was lowered, the defect concentrations were shown to increase significantly.

OSTI ID:
21518315
Journal Information:
Applied Physics Letters, Vol. 98, Issue 10; Other Information: DOI: 10.1063/1.3562307; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English