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Title: N site ordering effect on partially ordered Fe{sub 16}N{sub 2}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3560051· OSTI ID:21518301
;  [1]; ;  [2]
  1. Department of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, 200 Union St SE, 4-174 EE/CSci, Minneapolis, Minnesota 55455 (United States)
  2. High Temperature Materials Laboratory, Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

Partially ordered Fe{sub 16}N{sub 2} thin films have been fabricated on Fe (001)-buffered GaAs (001) single-crystal substrates by a facing target sputtering process. The saturation magnetization has been systematically investigated as a function of N site ordering in partially ordered Fe{sub 16}N{sub 2} thin films, which is found to be increased monotonically with the increase in the N site ordering parameter, reaching up to 2.68 T at high ordering case. A model discussion is provided based on the partial localization of 3d electron states in this material system, which successfully rationalizes the formation of the giant saturation magnetization in chemically ordered Fe{sub 16}N{sub 2}. We further demonstrate that the average magnetic moment of partially ordered Fe{sub 16}N{sub 2} sensitively depends on the special arrangement of Fe{sub 6}N clusters, which is the key to realize high magnetic moment in this material system.

OSTI ID:
21518301
Journal Information:
Applied Physics Letters, Vol. 98, Issue 9; Other Information: DOI: 10.1063/1.3560051; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English