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Title: Improved epitaxy of ultrathin praseodymia films on chlorine passivated Si(111) reducing silicate interface formation

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3525175· OSTI ID:21518210
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  1. Department of Physics, University of Osnabrueck, Barbarastrasse 7, D-49069 Osnabrueck (Germany)
  2. Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen (Germany)

Ultrathin praseodymia films have been deposited on both Cl-passivated and nonpassivated Si(111) substrates by molecular beam epitaxy. Comparative studies on the crystallinity and stoichiometry are performed by x-ray photoelectron spectroscopy, x-ray standing waves, and x-ray reflectometry. On nonpassivated Si(111) an amorphous silicate film is formed. In contrast, praseodymia deposited on Cl-passivated Si(111) form a well-ordered crystalline film with cubic-Pr{sub 2}O{sub 3} (bixbyite) structure. The vertical lattice constant of the praseodymia film is increased by 1.4% compared to the bulk value. Furthermore, the formation of an extended amorphous silicate interface layers is suppressed and confined to only one monolayer.

OSTI ID:
21518210
Journal Information:
Applied Physics Letters, Vol. 97, Issue 24; Other Information: DOI: 10.1063/1.3525175; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English