In-Situ RBS Channelling Studies Of Ion Implanted Semiconductors And Insulators
- Friedrich-Schiller-Universitaet Jena, Institut fuer Festkoerperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)
The experimental set-up at the ion beam facility in Jena allows the performance of Rutherford backscattering spectrometry (RBS) in channeling configuration at any temperature between 15 K and room temperature without changing the environment or the temperature of the sample. Doing RBS channeling studies at 15 K increases the sensitivity to defects, because the influence of lattice vibrations is reduced. Thus, the very early processes of ion induced damage formation can be studied and the cross section of damage formation per ion in virgin material, P, can be determined. At 15 K ion-beam induced damage formation itself can be investigated, because the occurrence of thermal effects can be widely excluded. In AlAs, GaN, and ZnO the cross section P measured at 15 K can be used to estimate the displacement energy for the heavier component, which is in reasonable agreement with other experiments or theoretical calculations. For a given ion species (here Ar ions) the measured cross section P exhibits a quadratic dependence P{proportional_to}P{sub SRIM}{sup 2} with P{sub SRIM} being the value calculated with SRIM using established displacement energies from other sources. From these results the displacement energy of AlN can be estimated to about 40 eV. Applying the computer code DICADA to calculate the depth distribution of displaced lattice atoms from the channeling spectra, indirect information about the type of defects produced during ion implantation at 15 K can be obtained. In some materials like GaN or ZnO the results indicate the formation of extended defects most probably dislocation loops and thus suggest an athermal mobility of defect at 15 K.
- OSTI ID:
- 21513436
- Journal Information:
- AIP Conference Proceedings, Vol. 1336, Issue 1; Conference: CAARI 2010: 21. International Conference on the Application of Accelerators in Research and Industry, Fort Worth, TX (United States), 8-13 Aug 2010; Other Information: DOI: 10.1063/1.3586177; (c) 2011 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM NITRIDES
ARGON IONS
CHANNELING
CROSS SECTIONS
DISLOCATIONS
GALLIUM NITRIDES
ION BEAMS
ION IMPLANTATION
LATTICE VIBRATIONS
MOBILITY
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPATIAL DISTRIBUTION
SPECTRA
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
THERMAL ANALYSIS
ZINC OXIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISTRIBUTION
GALLIUM COMPOUNDS
IONS
LINE DEFECTS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SPECTROSCOPY
TEMPERATURE RANGE
ZINC COMPOUNDS